Space Exploration Activities Are Expected to Augment the Gan Epitaxial Wafers Market Growth

Gallium nitride (GaN) is used in the production of light-emitting diodes, radio-frequency (RF) components, and semiconductor power devices. GaN-powered devices have proven to be more efficient than silicon-powered devices in RF, power conversion, and analog applications. Moreover, the production cost of these devices is lower than that of silicon, as GaN devices are manufactured using standard silicon manufacturing processes currently used to produce conventional silicon semiconductors. GaN devices are much smaller and can be produced per wafer. GaN-powered devices are faster that yield less capacitance and less switching losses results in fewer losses when charging/discharging devices. Furthermore, these devices need less space on the printed circuit board.

The above-mentioned benefits of GaN over silicon transistors are expected to propel the growth of the GaN epitaxial wafers market. Moreover, technological advances related to GaN devices are increasing the computational power of all systems, driving market growth. For example, in 2017, Yuji Zhao received a three-year grant of US$ 750,000 from NASA’s Hot Operating Temperature Technology program for GaN processor (Gallium nitride is a next-generation technology of space exploration) for applications in space. Furthermore, in 2018, Corsair introduced Corsair AX1600i with voltage regulation, noise levels, ripple suppression, off-shelf efficiency, and a highly compact power supply unit.